?200 7 fairchild semiconductor corporation 1 www.fairchildsemi.com FGL40N120AN rev. a1 FGL40N120AN 1200v npt igbt july 2007 igbt ? FGL40N120AN 1200v npt igbt features ? high speed switching ? low saturation voltage : v ce(sat) = 2.6 v @ i c = 40a ? high input impedance applications induction heating, ups, ac & dc motor controls and general purpose inverters. description employing npt technology, fairchil d?s an series of igbts pro- vides low conduction and switchi ng losses. the an series offers an solution for application such as induction heating (ih), motor control, general purpose inverters and uninterruptible power supplies (ups). absolute maximum ratings notes: (1) pulse width limited by max. junction temperature thermal characteristics gc e to-264 c g e symbol parameter f gl40n120an units v ces collector-emitter voltage 1200 v v ges gate-emitter voltage 25 v i c collector current @t c = 25 c64 a collector current @t c = 100 c40 a i cm(1) pulsed collector current 160 a p d maximum power dissipation @t c = 25 c 500 w maximum power dissipation @t c = 100 c 200 w scwt short circuit withstand time, v ce = 600v, v ge = 15v, t c = 125 c 10 s t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction-to-case -- 0.25 c/w r ja thermal resistance, junction-to-ambient -- 25 c/w
2 www.fairchildsemi.com FGL40N120AN rev. a1 FGL40N120AN 1200v npt igbt package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted device marking device package reel size tape width quantity FGL40N120AN FGL40N120AN to-264 - - 25 symbol parameter conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 1ma 1200 -- -- v bv ces / ' t j temperature coefficient of breakdown voltage v ge = 0v, i c = 1ma -- 0.6 -- v/ q c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 1 ma i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 250 na on characteristics v ge(th) g-e threshold voltage i c = 250 p a, v ce = v ge 3.5 5.5 7.5 v v ce(sat) collector to emitter saturation voltage i c = 40a, v ge = 15v -- 2.6 3.2 v i c = 40a, v ge = 15v, t c = 125 q c -- 2.9 -- v i c = 64a, v ge = 15v -- 3.15 -- v dynamic characteristics c ies input capacitance v ce = 30v, v ge = 0v f = 1mhz -- 3200 -- pf c oes output capacitance -- 370 -- pf c res reverse transfer capacitance -- 125 -- pf switching characteristics t d(on) turn-on delay time v cc = 600v, i c = 40a, r g = 5 : , v ge = 15v, inductive load, t c = 25 q c -- 15 -- ns t r rise time -- 20 -- ns t d(off) turn-off delay time -- 110 -- ns t f fall time -- 40 80 ns e on turn-on switching loss -- 2.3 3.45 mj e off turn-off switching loss -- 1.1 1.65 mj e ts total switching loss -- 3.4 5.1 mj t d(on) turn-on delay time v cc = 600v, i c = 40a, r g = 5 : , v ge = 15v, inductive load, t c = 125 q c -- 20 -- ns t r rise time -- 25 -- ns t d(off) turn-off delay time -- 120 -- ns t f fall time -- 45 -- ns e on turn-on switching loss -- 2.5 -- mj e off turn-off switching loss -- 1.8 -- mj e ts total switching loss -- 4.3 -- mj q g total gate charge v ce = 600v, i c = 40a, v ge = 15v -- 220 330 nc q ge gate-emitter charge -- 25 38 nc q gc gate-collector charge -- 130 195 nc
3 www.fairchildsemi.com FGL40N120AN rev. a1 FGL40N120AN 1200v npt igbt typical performance characteristics figure 1. typical output characteristi cs figure 2. typical saturation voltage characteristics figure 3. saturation voltage vs. case figure 4. load current vs. frequency temperature at variant current level figure 5. saturation voltage vs. v ge figure 6. saturation voltage vs. v ge 0246810 0 50 100 150 200 250 300 20v 17v 15v 12v v ge = 10v t c = 25 q c collector current, i c [a] collector-emitter voltage, v ce [v] 0246 0 40 80 120 160 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 25 50 75 100 125 1 2 3 4 5 80a common emitter v ge = 15v 40a i c = 20a collector-emitter voltage, v ce [v] case temperature, t c [ q c] 0.1 1 10 100 1000 0 10 20 30 40 50 60 70 80 v cc = 600v load current : peak of square wave duty cycle : 50% t c = 100 q c power dissipation = 100w load current [a] frequency [khz] 048121620 0 4 8 12 16 20 80a 40a common emitter t c = 125 q c i c = 20a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 048121620 0 4 8 12 16 20 80a 40a common emitter t c = 25 q c i c = 20a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v]
4 www.fairchildsemi.com FGL40N120AN rev. a1 FGL40N120AN 1200v npt igbt typical performance characteristics (continued) figure 7. capacitance characteristics fi gure 8. turn-on characteristics vs. gate resistance figure 9. turn-off characteristics vs. fi gure 10. switching loss vs. gate resistance gate resistance figure 11. turn-on characteristics vs. figure 12. turn-off characteristics vs. collector current collector current 0 10203040506070 10 100 common emitter v cc = 600v, v ge = r 15v i c = 40a t c = 25 q c t c = 125 q c td(on) tr switching time [ns] gate resistance, r g [ : ] 110 0 1000 2000 3000 4000 5000 6000 ciss coss common emitter v ge = 0v, f = 1mhz t c = 25 q c crss capacitance [pf] collector-emitter voltage, v ce [v] 0 10203040506070 10 100 1000 common emitter v cc = 600v, v ge = r 15v, i c = 40a t c = 25 q c t c = 125 q c td(off) tf switching time [ns] gate resistance, r g [ : ] 0 10203040506070 1 10 common emitter v cc = 600v, v ge = r 15v i c = 40a t c = 25 q c t c = 125 q c eon eoff switching loss [mj] gate resistance, r g [ : ] 20 30 40 50 60 70 80 10 100 common emitter v ge = r 15v, r g = 5 : t c = 25 q c t c = 125 q c tr td(on) switching time [ns] collector current, i c [a] 20 30 40 50 60 70 80 100 common emitter v ge = r 15v, r g = 5 : t c = 25 q c t c = 125 q c td(off) tf switching time [ns] collector current, i c [a]
5 www.fairchildsemi.com FGL40N120AN rev. a1 FGL40N120AN 1200v npt igbt typical performance characteristics (continued) figure 13. switching loss vs. collector current figure 14. gate charge characteristics figure 15. soa characterist ics figure 16. turn-off soa figure 17. transient thermal impedance of igbt 20 30 40 50 60 70 80 0.1 1 10 common emitter v ge = r 15v, r g = 5 : t c = 25 q c t c = 125 q c eon eoff switching loss [mj] collector current, i c [a] 0 50 100 150 200 250 0 2 4 6 8 10 12 14 16 600v 400v common emitter r l = 15 : t c = 25 q c vcc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 1 10 100 1000 1 10 100 safe operating area v ge = 15v, t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0.1 1 10 100 1000 0.01 0.1 1 10 100 50 p s 100 p s 1ms dc operation ic max (pulsed) ic max (continuous) single nonrepetitive pulse tc = 25 o c curves must be derated linearly with increase in temperature collector current, ic [a] collector - emitter voltage, v ce [v] 1e-5 1e-4 1e-3 0.01 0.1 1 10 1e-3 0.01 0.1 1 0.1 0.5 0.2 0.05 0.02 0.01 single pulse thermal response [zthjc] rectangular pulse duration [sec] pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm u zthjc + t c pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm u zthjc + t c
6 www.fairchildsemi.com FGL40N120AN rev. a1 FGL40N120AN 1200v npt igbt mechanical dimensions 5.45typ [5.45 0.30 ] 5.45typ [5.45 0.30 ] 4.90 0.20 20.00 0.20 (8.30) (8.30) (1.00) (0.50) (2.00) (7.00) (r1.00) (r2.00) ?3.30 0.20 (7.00) (1.50) (1.50) (1.50) 2.50 0.20 3.00 0.20 2.80 0.30 1.00 +0.25 ?0.10 0.60 +0.25 ?0.10 1.50 0.20 6.00 0.20 20.00 0.20 20.00 0.50 5.00 0.20 3.50 0.20 2.50 0.10 (9.00) (9.00) (2.00) (1.50) (0.15) (2.80) (4.00) (11.00) to-264 dimensions in millimeters
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